CPC H01L 29/4234 (2013.01) [A61B 17/068 (2013.01); A61B 17/07207 (2013.01); A61B 17/105 (2013.01); H01L 29/4958 (2013.01); H10B 43/10 (2023.02); H10B 43/27 (2023.02); A61B 2017/00473 (2013.01); A61B 17/072 (2013.01); A61B 2017/07257 (2013.01); A61B 2017/07271 (2013.01); A61B 2017/07278 (2013.01); A61B 2017/07285 (2013.01); A61B 2017/2927 (2013.01); A61B 2090/0814 (2016.02)] | 21 Claims |
1. A method of forming an integrated assembly, comprising:
forming a stack comprising alternating first and second materials; the second material being an insulative material;
forming openings through the stack;
forming channel-material-pillars in some of the openings and leaving other openings empty;
removing the first material to leave voids;
forming conductive liners along the empty openings; and
while the conductive liners remain, filling the voids with conductive material.
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