| CPC H01L 29/32 (2013.01) [H01L 21/221 (2013.01); H01L 27/0664 (2013.01); H01L 29/1095 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01)] | 31 Claims |
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1. A semiconductor device comprising:
a semiconductor substrate that has an upper surface and a lower surface and that is provided with a drift region of a first conductivity type;
a plurality of trench portions that are provided to reach the drift region from the upper surface of the semiconductor substrate and arrayed in a first direction;
a mesa portion that is interposed between adjacent two trench portions among the plurality of trench portions;
an interlayer dielectric film that is provided on an upper surface of the mesa portion; and
a contact hole that is provided in the interlayer dielectric film,
wherein the mesa portion has
a base region of a second conductivity type that is provided between the drift region and the upper surface, and
a first region that is provided within the base region and has a concentration peak of a hydrogen chemical concentration at a first depth position in the mesa portion,
wherein ends of the first region in the first direction are aligned with ends of the contact hole in the first direction, and
wherein the hydrogen chemical concentration at the first depth position continuously decreases, in the first direction, from the ends of the first region until reaching the adjacent two trench portions.
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