US 11,996,441 B2
Semiconductor device for high voltage applications
Bong Woong Mun, Singapore (SG); and Kun Liu, Singapore (SG)
Assigned to GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed by GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed on Dec. 10, 2021, as Appl. No. 17/547,288.
Prior Publication US 2023/0187483 A1, Jun. 15, 2023
Int. Cl. H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0607 (2013.01) [H01L 21/76202 (2013.01); H01L 21/76224 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first region disposed on a substrate, the first region comprising a discontinuous layer including at least one gap portion, wherein the at least one gap portion comprises a portion of the substrate;
a second region disposed on the first region;
a third region disposed in the second region; and
a first terminal region disposed in the third region,
wherein the at least one gap portion is located directly below the third region; wherein the first region and the second region have a first conductivity type; wherein the substrate, the third region and the first terminal region have a second conductivity type; and wherein the first conductivity type is different from the second conductivity type.