US 11,996,438 B1
Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabrication
Somilkumar J. Rathi, Denver, CO (US); Noriyuki Sato, Hillsboro, OR (US); Niloy Mukherjee, San Ramon, CA (US); Rajeev Kumar Dokania, Beaverton, OR (US); Amrita Mathuriya, Portland, OR (US); Tanay Gosavi, Portland, OR (US); Pratyush Pandey, Kensington, CA (US); Jason Y. Wu, Albany, NY (US); and Sasikanth Manipatruni, Portland, OR (US)
Assigned to Kepler Computing Inc., San Francisco, CA (US)
Filed by Kepler Computing Inc., San Francisco, CA (US)
Filed on Dec. 15, 2021, as Appl. No. 17/552,345.
Application 17/552,345 is a continuation of application No. 17/550,899, filed on Dec. 14, 2021.
Int. Cl. G11C 11/22 (2006.01); H01L 49/02 (2006.01); H10B 51/30 (2023.01); H10B 53/30 (2023.01)
CPC H01L 28/57 (2013.01) [G11C 11/221 (2013.01); H01L 28/91 (2013.01); H01L 28/92 (2013.01); H10B 51/30 (2023.02); H10B 53/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first electrode structure and a second electrode structure within an etch stop layer comprising an insulator, the first electrode structure laterally separated from the second electrode structure, wherein the first electrode structure and the second electrode structure comprise:
a first conductive hydrogen barrier layer; and
a first conductive fill material on the first conductive hydrogen barrier layer;
a planar capacitor comprising a first ferroelectric material or a first paraelectric material between a pair of conductive electrodes, the planar capacitor on least a portion of the first electrode structure;
an encapsulation layer on the planar capacitor;
a dielectric on the encapsulation layer, the dielectric comprising a low film density;
a via electrode on at least a portion of the planar capacitor, the via electrode comprising:
a second conductive hydrogen barrier layer; and
a second conductive fill material on the second conductive hydrogen barrier layer;
a dielectric structure within the dielectric, the dielectric structure above the second electrode structure, wherein the dielectric structure comprises an amorphous, greater than 90% film density hydrogen barrier material;
a trench within the dielectric structure, the trench on the second electrode structure; and
a non-planar capacitor within the trench, the non-planar capacitor comprising:
a bottom electrode that is substantially conformal along a base and sidewall of the trench, wherein the bottom electrode is in contact with the second electrode structure and the encapsulation layer;
a dielectric layer substantially conformal to the bottom electrode, the dielectric layer comprising a second ferroelectric material or a second paraelectric material; and
a top electrode in contact with the dielectric layer.