US 11,996,426 B2
Biased band pass filter, dielectric-metal-dielectric-semiconductor
Andrew Harris, Chelmsford (GB); and Andrew Kelt, Chelmsford (GB)
Assigned to TELEDYNE UK LIMITED, Chelmsford (GB)
Appl. No. 17/415,554
Filed by Teledyne UK Limited, Chelmsford (GB)
PCT Filed Feb. 14, 2020, PCT No. PCT/GB2020/050358
§ 371(c)(1), (2) Date Jun. 17, 2021,
PCT Pub. No. WO2020/165607, PCT Pub. Date Aug. 20, 2020.
Claims priority of application No. 1902046 (GB), filed on Feb. 14, 2019.
Prior Publication US 2022/0059591 A1, Feb. 24, 2022
Int. Cl. H01L 27/146 (2006.01); H01L 27/148 (2006.01)
CPC H01L 27/14621 (2013.01) [H01L 27/1464 (2013.01); H01L 27/14643 (2013.01); H01L 27/14831 (2013.01)] 25 Claims
OG exemplary drawing
 
1. A photodetector comprising:
a semiconductor substrate having an input surface for receiving illumination;
control electrodes for control of photogenerated charge within the substrate; and
a filter on the input surface of the substrate, the filter comprising a dielectric-metal band pass filter having a metal layer and one or more dielectric layers with one dielectric layer in physical communication with the substrate and the metal layer; and
a connector for applying a bias voltage to the metal layer with respect to the substrate.