| CPC H01L 27/1446 (2013.01) [G01S 7/4816 (2013.01); G01S 17/10 (2013.01); H01L 31/02327 (2013.01); H01L 31/03529 (2013.01); H01L 31/107 (2013.01)] | 20 Claims |
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1. A light detector, comprising:
a plurality of elements, each of the elements including a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, and a third semiconductor region of a second conductivity type, the second semiconductor region being located on the first semiconductor region and having a higher first-conductivity-type impurity concentration than the first semiconductor region, the third semiconductor region being located on the second semiconductor region, the elements being arranged at a first period in a second direction crossing a first direction, the first direction being from the first semiconductor region toward the second semiconductor region;
a quenching part electrically connected with the third semiconductor region;
a plurality of lenses located respectively on the elements, one of the lenses being positioned on one of the elements; and
a refracting layer located between the elements and the lenses, the refracting layer having a first thickness,
a ratio of the first thickness to the first period being not less than 0.16 and not more than 0.72.
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