US 11,996,402 B2
Semiconductor device
In-Wook Oh, Suwon-si (KR); Byungyun Kang, Anyang-si (KR); Donghyun Kim, Hwaseong-si (KR); Hyungjune Kim, Suwon-si (KR); and Jaebong Jung, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 25, 2021, as Appl. No. 17/329,669.
Claims priority of application No. 10-2020-0144216 (KR), filed on Nov. 2, 2020.
Prior Publication US 2022/0139900 A1, May 5, 2022
Int. Cl. H01L 27/02 (2006.01); H01L 21/8238 (2006.01); H01L 23/48 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC H01L 27/0207 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 23/481 (2013.01); H01L 23/5286 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 29/7851 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate that includes a cell region and a dummy region;
a first metal layer on the substrate, the first metal layer including a dummy line on the dummy region;
a power delivery network on a bottom surface of the substrate; and
a first through via that penetrates the substrate and extends from the power delivery network toward the dummy line,
wherein the first through via is electrically connected to the dummy line,
wherein the power delivery network includes:
a plurality of lower lines; and
a pad line below the lower lines, and
wherein the pad line is electrically connected through the lower lines to the first through via.