| CPC H01L 23/544 (2013.01) [H01L 22/14 (2013.01); H01L 25/50 (2013.01); H01L 28/60 (2013.01); H01L 2223/54426 (2013.01)] | 5 Claims |
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1. A method of manufacturing a semiconductor memory device, the method comprising:
processing a first substrate, wherein processing the first substrate comprises:
embedding a sacrificial material in the first substrate;
disposing a first align mark over the sacrificial material; and
disposing a first structure over a first surface of the first substrate;
exposing the sacrificial material by removing a part of the first substrate from a rear surface of the first substrate opposite the first surface of the first substrate;
removing the sacrificial material;
processing a second substrate, wherein processing the second substrate comprises disposing a second align mark and a second structure at a surface of the second substrate;
disposing the first substrate over the second substrate such that the second structure and the first structure face each other; and
coupling the first structure and the second structure by checking alignment of the first align mark with the second align mark through a region from which the sacrificial material was removed.
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