US 11,996,367 B2
Semiconductor device and semiconductor package including the same
Yeongkwon Ko, Hwaseong-si (KR); Jaeeun Lee, Suwon-si (KR); and Junyeong Heo, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 2, 2023, as Appl. No. 18/328,322.
Application 18/328,322 is a continuation of application No. 17/589,301, filed on Jan. 31, 2022, granted, now 11,694,963.
Application 17/589,301 is a continuation of application No. 16/922,163, filed on Jul. 7, 2020, granted, now 11,239,171, issued on Feb. 1, 2022.
Claims priority of application No. 10-2019-0141313 (KR), filed on Nov. 7, 2019.
Prior Publication US 2023/0326863 A1, Oct. 12, 2023
Int. Cl. H01L 23/538 (2006.01); H01L 25/065 (2023.01)
CPC H01L 23/5385 (2013.01) [H01L 23/5386 (2013.01); H01L 25/0657 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate having a first surface and a second surface opposing each other;
a plurality of semiconductor elements disposed on the first surface in a device region, wherein the second surface is divided into a first region overlapping the device region, and a second region surrounding the first region;
an insulating protective layer disposed on the first region of the second surface of the semiconductor substrate, and having an opening region exposing at least a portion of the second region;
an upper insulating layer disposed on the insulating protective layer, and having an extended portion extending onto the at least a portion of the second region in the opening region; and
a connection pad disposed on the insulating protective layer, and electrically connected to the semiconductor elements.