	US 11,996,336 B2
	Electron beam probing techniques and related structures
Amitava Majumdar, Boise, ID (US); Radhakrishna Kotti, Boise, ID (US); and Mallesh Rajashekharaiah, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 6, 2022, as Appl. No. 17/714,770.
Application 17/714,770 is a division of application No. 16/700,976, filed on Dec. 2, 2019, granted, now 11,302,589.
Prior Publication US 2022/0301946 A1, Sep. 22, 2022
Int. Cl. H01L 21/00 (2006.01); H01J 37/28 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H10B 63/00 (2023.01); G11C 13/00 (2006.01); H01J 37/04 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)

CPC H01L 22/12 (2013.01) [H01J 37/28 (2013.01); H01L 21/76802 (2013.01); H01L 21/76834 (2013.01); H01L 21/76877 (2013.01); H01L 23/5283 (2013.01); H10B 63/84 (2023.02); G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 2213/71 (2013.01); H01J 37/04 (2013.01); H01J 2237/2804 (2013.01); H01J 2237/2814 (2013.01); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8825 (2023.02)]

18 Claims

1. An apparatus, comprising:

a substrate coupled with a test stage, the substrate at a first level of a memory device;

a set of access lines for the memory device, the set of access lines at a second level of the memory device and comprising a first material;

a first set of lines comprising the first material and at the second level of the memory device, the first set of lines each electrically floating; and

a second set of lines comprising the first material and at the second level of the memory device, the second set of lines each coupled with a ground reference.