| CPC H01L 21/31116 (2013.01) [H01J 37/32449 (2013.01); H01J 2237/3341 (2013.01); H01L 21/31144 (2013.01)] | 16 Claims |
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1. A substrate processing method comprising:
(a) carrying a substrate into a first chamber, the substrate having a first film, which is a processing target, with a recess formed therein, and a mask provided on the first film with an opening formed at a position of the mask corresponding to the recess;
(b) adjusting a temperature of the substrate to 200° C. or higher;
(c) forming a second film, which is a silicon nitride film, on a side wall of the recess;
(d) carrying the substrate into a second chamber different from the first chamber;
(e) adjusting the temperature of the substrate to 100° C. or lower; and
(f) etching a bottom of the recess,
wherein (c) includes
(c-1) supplying silicon-containing reactive species into the first chamber, thereby adsorbing the silicon-containing reactive species onto the side wall of the recess; and
(c-2) supplying nitrogen-containing reactive species into the first chamber to cause a reaction between the silicon-containing reactive species adsorbed onto the side wall of the recess and the nitrogen-containing reactive species, thereby forming the second film on the side wall of the recess,
a film thickness of the second film is 20 nm or less, and
(a) to (f) are repeated twice or more in this order until an aspect ratio becomes 50 or more, the aspect ratio indicating a ratio of a depth dimension from the opening of the mask to the bottom of the recess, to a dimension of the opening of the mask.
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