CPC H01L 21/3065 (2013.01) [H01L 21/02112 (2013.01); H01L 21/02263 (2013.01); H01L 21/0234 (2013.01); H01L 21/02348 (2013.01); B81C 2201/0138 (2013.01); H01L 21/0228 (2013.01); H01L 21/30655 (2013.01); H01L 21/31116 (2013.01)] | 20 Claims |
1. A method of processing a substrate, the method comprising:
flowing a noble gas into a processing region of a processing chamber;
forming a first layer from the noble gas on a substrate;
flowing a fluorine-containing gas comprising SF6, NF3, F2, C4H8, CHF3, or combinations thereof into the processing region;
forming a fluorine-containing layer from the fluorine-containing gas on the first layer;
exposing the substrate, the first layer comprising the noble gas, and the fluorine-containing layer to energy to form a passivation layer while maintaining the substrate at conditions encompassing a triple point temperature of the noble gas; and
etching the substrate with ions.
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