	US 11,996,289 B2
	Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
Amir Kajbafvala, Chandler, AZ (US); Joe Margetis, Gilbert, AZ (US); Xin Sun, Tempe, AZ (US); David Kohen, Phoenix, AZ (US); and Dieter Pierreux, Dilbeek (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jan. 5, 2021, as Appl. No. 17/141,360.
Claims priority of provisional application 63/011,215, filed on Apr. 16, 2020.
Prior Publication US 2021/0327704 A1, Oct. 21, 2021
Int. Cl. C23C 16/24 (2006.01); C23C 16/08 (2006.01); C23C 16/42 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C30B 25/16 (2006.01); C30B 25/18 (2006.01); C30B 29/06 (2006.01); C30B 29/52 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)

CPC H01L 21/0262 (2013.01) [C23C 16/08 (2013.01); C23C 16/24 (2013.01); C23C 16/42 (2013.01); C23C 16/45523 (2013.01); C23C 16/52 (2013.01); C30B 25/165 (2013.01); C30B 25/18 (2013.01); C30B 29/06 (2013.01); C30B 29/52 (2013.01); H01L 21/02507 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02603 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01)]

7 Claims

1. A method of forming a structure, the method comprising the steps of:

providing a substrate within a reaction chamber;

forming a first layer comprising silicon and germanium overlying a surface of the substrate; and

forming a second layer comprising silicon overlying the first layer,

wherein the step of forming the first layer comprises providing a surfactant precursor to the reaction chamber only during the last twenty-five percent of the step of forming the first layer, and

wherein the second layer consists essentially of silicon and is in direct contact with the first layer.