depositing a first seasoning film onto a component of the process chamber at a chamber pressure of about 4 mTorr to about 20 mTorr and a temperature below about 200° C. or about 200° C. to about 400° C.;

depositing a second seasoning film onto the first seasoning film; and

depositing a deposition film onto the second seasoning film,

wherein depositing the first seasoning film comprises flowing a first carbon-containing precursor gas and a first inert precursor gas into the process chamber,

wherein the first seasoning film comprises a first intrinsic stress having a first value and the second seasoning film comprises a second intrinsic stress having a second value that is less than the first value.