US 11,996,270 B2
Wafer processing apparatus
Eunhee Jeang, Paju-si (KR); Seongkeun Cho, Suwon-si (KR); Kyungrim Kim, Anyang-si (KR); Incheol Song, Hwaseong-si (KR); and Jangwon Cho, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 13, 2021, as Appl. No. 17/401,443.
Claims priority of application No. 10-2021-0000987 (KR), filed on Jan. 5, 2021.
Prior Publication US 2022/0216039 A1, Jul. 7, 2022
Int. Cl. H01J 37/32 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); C23C 16/511 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32238 (2013.01) [H01J 37/32229 (2013.01); H01J 37/32669 (2013.01); C23C 16/4404 (2013.01); C23C 16/45565 (2013.01); C23C 16/511 (2013.01); H01J 37/3244 (2013.01); H01J 37/3266 (2013.01); H01L 21/67069 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A wafer processing apparatus comprising:
a chamber body including a cavity region and a process region;
a microwave waveguide configured to introduce a microwave into the cavity region of the chamber body;
a first microwave window between the cavity region and the process region of the chamber body;
a showerhead between the first microwave window and the process region of the chamber body; and
a magnetic field supplying device configured to apply a magnetic field inside the chamber body,
wherein a thickness of the first microwave window is constant,
the first microwave window is configured to control a beam cross-section of the microwave in the process region of the chamber body,
the first microwave window comprises a circular region and a ring-shaped region surrounding the circular region,
the first microwave window further comprises a transmittance adjusting coating thereon, and
a transmittance of the transmittance adjusting coating on the circular region of the first microwave window is different from a transmittance of the transmittance adjusting coating on the ring-shaped region of the first microwave window.