US 11,996,266 B2
Apparatus and techniques for substrate processing using independent ion source and radical source
Anthony Renau, West Newbury, MA (US); Joseph C. Olson, Beverly, MA (US); and Peter F. Kurunczi, Cambridge, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by APPLIED Materials, Inc., Santa Clara, CA (US)
Filed on Nov. 9, 2020, as Appl. No. 17/093,139.
Claims priority of provisional application 62/942,430, filed on Dec. 2, 2019.
Prior Publication US 2021/0166946 A1, Jun. 3, 2021
Int. Cl. H01J 37/20 (2006.01); H01J 37/304 (2006.01)
CPC H01J 37/304 (2013.01) [H01J 37/20 (2013.01); H01J 2237/201 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A system, comprising:
a substrate stage to support a substrate;
a plurality of beam sources, comprising:
an ion beam source, the ion beam source arranged to direct an ion beam to the substrate; and
a radical beam source, the radical beam source arranged to direct a radical beam to the substrate;
a controller arranged for controlling the ion beam source and the radical beam source to operate independently of one another, in at least one aspect,
wherein the at least one aspect includes beam composition, beam angle of incidence, and relative scanning of the beam source with respect to the substrate, the system further comprising:
an ion beam source scanner to scan the ion beam source with respect to the substrate.