memory cells;

a program operation performer configured to perform a verify operation and a program voltage apply operation, wherein the verify operation is performed to verify whether threshold voltages of the memory cells have reached threshold voltages corresponding to a target program state using a first verify voltage, a second verify voltage higher than the first verify voltage, and a third verify voltage higher than the second verify voltage, and wherein the program voltage apply operation is performed to apply a program voltage to a word line coupled in common to the memory cells based on a result of the verify operation; and

a program operation controller configured to control the program operation performer such that, during the program voltage apply operation, a precharge voltage is first applied to a second bit line coupled to a second memory cell having a threshold voltage that is higher than the second verify voltage and lower than or equal to a third verify voltage, among the memory cells, before a precharge voltage is applied to a first bit line coupled to a first memory cell having a threshold voltage that is higher than the first verify voltage and lower than or equal to the second verify voltage, among the memory cells.