US 11,996,146 B2
Method for reading cross point-type memory array including two-terminal switching material
Jun-sung Kim, Baltimore, MD (US)
Appl. No. 17/599,528
Filed by Jun-sung Kim, Baltimore, MD (US)
PCT Filed Apr. 2, 2020, PCT No. PCT/KR2020/004517
§ 371(c)(1), (2) Date Sep. 28, 2021,
PCT Pub. No. WO2020/204628, PCT Pub. Date Oct. 8, 2020.
Application 17/599,528 is a continuation of application No. 16/372,935, filed on Apr. 2, 2019, granted, now 10,896,726.
Prior Publication US 2022/0148654 A1, May 12, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); G06N 3/063 (2023.01); G11C 13/00 (2006.01)
CPC G11C 13/004 (2013.01) [G06N 3/063 (2013.01); G11C 13/003 (2013.01); G11C 2213/15 (2013.01); G11C 2213/32 (2013.01); G11C 2213/71 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A method for reading a memory array including a two-terminal switching material, the method comprising:
(a) selecting at least one cell by applying a voltage to a memory array; and
(b) simultaneously measuring the sum of currents from the at least one cell selected,
wherein the voltage applied to the at least one cell selected in operation (a) is higher than a voltage applied to at least one cell not selected while being within a range in which all of the selected at least one cell is not turned on.