US 11,996,131 B2
Preconditioning operation for a memory cell with a spontaneously-polarizable memory element
Johannes Ocker, Dresden (DE); and Foroozan Koushan, Dresden (DE)
Assigned to Ferroelectric Memory GmbH, Dresden (DE)
Filed by Ferroelectric Memory GmbH, Dresden (DE)
Filed on Jan. 4, 2022, as Appl. No. 17/568,158.
Prior Publication US 2023/0215481 A1, Jul. 6, 2023
Int. Cl. G11C 11/22 (2006.01); H10B 53/30 (2023.01)
CPC G11C 11/2275 (2013.01) [G11C 11/221 (2013.01); H10B 53/30 (2023.02); G11C 11/2273 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a memory cell, the method comprising:
forming a memory cell, wherein the memory cell comprises a spontaneously-polarizable memory element, wherein the spontaneously-polarizable memory element is in an as formed condition,
wherein the as formed condition is a condition of the spontaneously-polarizable memory element after forming the spontaneously-polarizable memory element and prior to any cycling operation of the memory cell; and
carrying out a preconditioning operation of the spontaneously-polarizable memory element to bring the spontaneously-polarizable memory element from the as-formed condition into an operable condition to allow for a writing of the memory cell after the preconditioning operation is carried out.