US 11,996,129 B2
Semiconductor circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued magnetoelectric spin hall effect
Darrell Schlom, Ithaca, NY (US); Mostafizur Rahman, Kansas City, MO (US); Kelin Kuhn, Corvallis, MO (US); and John Heron, Saline, MO (US)
Assigned to Cornell University, Ithaca, NY (US); The Curators of the University of Missouri, Columbia, MO (US); The Regents of the University of Michigan, Ann Arbor, MI (US); and Oregon State University, Corvallis, OR (US)
Appl. No. 16/308,337
Filed by Cornell University, Ithaca, NY (US); The Curators of the University of Missouri, Lees Summit, MO (US); The Regents of the University of Michigan, Ann Arbor, MI (US); Oregon State University, Corvallis, OR (US); Mostafizur Rahman, Kansas City, MO (US); Kelin Kuhn, Corvallis, OR (US); and John Heron, Saline, MI (US)
PCT Filed Jun. 12, 2017, PCT No. PCT/US2017/037051
§ 371(c)(1), (2) Date Dec. 7, 2018,
PCT Pub. No. WO2017/214628, PCT Pub. Date Dec. 14, 2017.
Claims priority of provisional application 62/348,803, filed on Jun. 10, 2016.
Prior Publication US 2023/0186961 A1, Jun. 15, 2023
Int. Cl. G11C 16/04 (2006.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); G11C 11/56 (2006.01); H10N 52/85 (2023.01)
CPC G11C 11/161 (2013.01) [G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/18 (2013.01); G11C 11/5607 (2013.01); H10N 52/85 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a multi-layer structure including a ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying structure that exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states, the underlying structure including:
(i) a piezoelectric material structure to exert a stress to the ferromagnetic, magnetostrictive layer to cause different magnetization directions in the ferromagnetic, magnetostrictive layer to be distinctive from one another and to represent the more than two distinctive magnetic states; and
(ii) a spin Hall metal layer that exhibits the spin Hall effect to inject a spin polarized current into the ferromagnetic, magnetostrictive layer to cause the ferromagnetic, magnetostrictive layer to be in one of the different magnetization directions in the ferromagnetic, magnetostrictive layer.