US 11,995,390 B2
Isolation circuit between power domains
Chi-Yu Lu, Hsinchu (TW); Ting-Wei Chiang, Hsinchu (TW); Hui-Zhong Zhuang, Hsinchu (TW); Jerry Chang Jui Kao, Hsinchu (TW); Pin-Dai Sue, Hsinchu (TW); Jiun-Jia Huang, Hsinchu (TW); Yu-Ti Su, Hsinchu (TW); and Wei-Hsiang Ma, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Dec. 9, 2022, as Appl. No. 18/064,000.
Application 18/064,000 is a division of application No. 17/115,436, filed on Dec. 8, 2020, granted, now 11,526,647.
Application 17/115,436 is a division of application No. 16/549,983, filed on Aug. 23, 2019, granted, now 10,867,104, issued on Dec. 15, 2020.
Claims priority of provisional application 62/726,153, filed on Aug. 31, 2018.
Prior Publication US 2023/0112357 A1, Apr. 13, 2023
Int. Cl. G06F 30/394 (2020.01); G03F 1/36 (2012.01); G03F 1/70 (2012.01); G06F 30/398 (2020.01)
CPC G06F 30/394 (2020.01) [G03F 1/36 (2013.01); G03F 1/70 (2013.01); G06F 30/398 (2020.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a type-one active zone and a type-two active zone forming two parallel active zones each extending in a first direction;
a first type-one transistor in a first portion of the type-one active zone and having a gate configured to have a first supply voltage of a first power supply;
a second type-one transistor in a second portion of the type-one active zone;
a first type-two transistor in a first portion of the type-two active zone and having a gate configured to have a second supply voltage of the first power supply;
a third type-one transistor in the first portion of the type-one active zone and having a first active-region conductively connected with an active-region of the first type-one transistor, the third type-one transistor having a second active-region and a gate conductively connected to each other;
a fourth type-one transistor in the second portion of the type-one active zone; and
a fifth type-one transistor in the first portion of the type-one active zone, wherein the fifth type-one transistor has a first active-region conductively connected with the gate of the third type-one transistor and has a second active-region configured to have a first supply voltage of a second power supply, and wherein the fifth type-one transistor is configured to be at a conducting state.