US 11,995,009 B2
Scale-out high bandwidth memory system
Krishna T. Malladi, San Jose, CA (US); Hongzhong Zheng, Los Gatos, CA (US); Dimin Niu, Sunnyvale, CA (US); and Peng Gu, Santa Barbara, CA (US)
Assigned to Samsung Electronics Co., Ltd., Yongin-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Sep. 8, 2021, as Appl. No. 17/469,769.
Application 17/469,769 is a continuation of application No. 16/194,219, filed on Nov. 16, 2018, granted, now 11,138,135.
Claims priority of provisional application 62/733,965, filed on Sep. 20, 2018.
Prior Publication US 2021/0406202 A1, Dec. 30, 2021
Int. Cl. G06F 13/16 (2006.01); G06F 7/544 (2006.01); G06F 9/30 (2018.01)
CPC G06F 13/1652 (2013.01) [G06F 7/5443 (2013.01); G06F 9/30014 (2013.01); G06F 9/30036 (2013.01); G06F 13/1694 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A memory system comprising:
a first memory card, wherein the first memory card comprises:
a memory device, wherein the memory device comprises a first logic die and a memory die;
a controller connected to the memory device and configured to communicate with a host;
a first connection configured to connect to the host; and
a first fabric connection; and
a second memory card, wherein the second memory card comprises:
a second logic die for performing a computation and generating a first output;
a second fabric connection,
wherein the second memory card is configured to transmit the first output to the first memory card via the second fabric connection that connects to the first memory card via the first fabric connection, wherein the first memory card is configured to generate a second output, and provide the second output to the host via the first connection.