US 11,994,807 B2
In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones
Andrew Weloth, Albany, NY (US); Michael Murphy, Latham, NY (US); Daniel J. Fulford, Ballston Lake, NY (US); Steven Gueci, Gansevoort, NY (US); and David C. Conklin, Saratoga Springs, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 21, 2023, as Appl. No. 18/171,989.
Claims priority of provisional application 63/337,708, filed on May 3, 2022.
Prior Publication US 2023/0359128 A1, Nov. 9, 2023
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70625 (2013.01) [G03F 7/70875 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A wafer processing system, comprising:
a metrology module configured to measure a wafer to identify a bow measurement of the wafer;
a film formation module configured to form a stressor film on the wafer, the stressor film reactive to heat such that the heat modifies an internal stress of the stressor film; and
a bake module having multiple heating zones for differentially heating the stressor film corresponding to the bow measurement,
wherein the heating zones of the bake module are provided in a vertical projection area of the wafer and are fixed with respect to each other.