US 11,993,845 B2
High selectivity atomic layer deposition process
Jong Choi, San Diego, CA (US); Christopher Ahles, San Diego, CA (US); Andrew C. Kummel, San Diego, CA (US); Keith Tatseun Wong, Los Gatos, CA (US); and Srinivas D. Nemani, Sunnyvale, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 4, 2020, as Appl. No. 16/809,318.
Claims priority of provisional application 62/813,911, filed on Mar. 5, 2019.
Prior Publication US 2020/0283898 A1, Sep. 10, 2020
Int. Cl. C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/458 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/401 (2013.01); C23C 16/4583 (2013.01); H01L 21/02142 (2013.01); H01L 21/0228 (2013.01); H01L 21/28518 (2013.01); H01L 21/02211 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of forming a metal containing material on a substrate comprising:
pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate;
pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate;
forming a metal containing material selectively on a first material of the substrate, wherein the metal containing layer is a MoSiO layer; and
thermal annealing the metal containing material formed on the substrate.