	US 11,993,844 B2
	Passivation of silicon dioxide defects for atomic layer deposition
Steven Wolf, San Diego, CA (US); Michael Breeden, San Diego, CA (US); Ashay Anurag, La Jolla, CA (US); and Andrew Kummel, San Diego, CA (US)
Assigned to The Regents of the University of California, Oakland, CA (US)
Filed by The Regents of the University of California, Oakland, CA (US)
Filed on Apr. 24, 2020, as Appl. No. 16/857,335.
Claims priority of provisional application 62/838,006, filed on Apr. 24, 2019.
Prior Publication US 2020/0340112 A1, Oct. 29, 2020
Int. Cl. C23C 16/455 (2006.01); C23C 16/02 (2006.01); H01L 21/02 (2006.01)

CPC C23C 16/45527 (2013.01) [C23C 16/02 (2013.01); H01L 21/02532 (2013.01); H01L 21/02554 (2013.01); H01L 21/0262 (2013.01); H01L 21/02658 (2013.01)]

10 Claims

1. A method for selectively depositing a metal, metal nitride, metal oxide, or metal silicide layer on a substrate, the substrate comprising a surface, the surface comprising: an SiO2 layer portion comprising hydroxyl groups on SiO₂; and a metal or metal oxide portion, the method comprising:

a) pre-treating the SiO2 layer portion of the surface, wherein the pre-treating cleans and renders the SiO2 layer portion of the surface hydrophilic;

b) exposing the surface to a passivant for a period of time between about 2 hours and less than about 24 hours at a temperature of about 200° C. or below that renders the surface of the SiO2 layer portion of the surface hydrophobic;

c) annealing the substrate at a temperature of about 300° C. or above to selectively passivate the SiO2 layer portion of the surface over the metal or metal oxide portion of the surface, wherein the passivant binds selectively to —OH or O on the SiO2 layer portion over the metal or metal oxide portion above about 300° C., wherein the passivant is selectively bound to the SiO2 portion of the surface over the metal or metal oxide portion of the surface, and wherein the metal or metal oxide of the surface is unpassivated and/or has characteristics of an unpassivated surface after the substrate is annealed; and

d) selectively growing the metal, metal nitride, metal oxide, or metal silicide layer on the metal or metal oxide portion of the surface,

wherein the passivant enhances selective growth of the metal, metal nitride, metal oxide, or metal silicide layer on the metal or metal oxide portion of the surface over the SiO2 layer portion of the surface, and wherein the metal, metal oxide, metal nitride, or metal silicide layer is grown by atomic layer deposition (ALD), and wherein the passivant is tetramethyldisilazane (TMDS).