US 11,993,729 B2
Chemical mechanical polishing composition
Christian Daeschlein, Herne (DE); Max Siebert, Ludwigshafen (DE); Yongqing Lan, Ludwigshafen (DE); Michael Lauter, Ludwigshafen (DE); Sheik Ansar Usman Ibrahim, Waterloo (BE); Reza M Golzarian, Hillsboro, OR (US); Te Yu Wei, Taoyuan (TW); Haci Osman Guevenc, Ludwigshafen (DE); Julian Proelss, Ludwigshafen (DE); and Leonardus Leunissen, Veldhoven (NL)
Assigned to BASF SE, (DE)
Appl. No. 16/765,665
Filed by BASF SE, Ludwigshafen am Rhein (DE)
PCT Filed Nov. 12, 2018, PCT No. PCT/EP2018/080888
§ 371(c)(1), (2) Date May 20, 2020,
PCT Pub. No. WO2019/101555, PCT Pub. Date May 31, 2019.
Claims priority of application No. 17203056 (EP), filed on Nov. 22, 2017.
Prior Publication US 2020/0299547 A1, Sep. 24, 2020
Int. Cl. C09G 1/02 (2006.01); H01L 21/321 (2006.01)
CPC C09G 1/02 (2013.01) [H01L 21/3212 (2013.01)] 21 Claims
 
1. A process for chemical mechanical polishing of a substrate comprising (i) cobalt and/or (ii) a cobalt alloy, and (iii) TiN and TaN, the process comprising contacting the substrate with a chemical mechanical polishing composition, comprising:
(A) ≥0.10 wt.-% to ≤4.00 wt.-% of inorganic particles,
(B) ≥0.10 wt.-% to ≤0.90 wt.-% of at least one organic compound comprising an amino group and/or at least one acid group (Y),
(C) ≥0.20 wt.-% to ≤0.90 wt.-% of potassium persulfate,
(D) ≥95.00 wt.-% to ≤99.58 wt.-% of an aqueous medium,
(E) ≥0.01 wt.-% to ≤0.50 wt.-% of at least one corrosion inhibitor, and
(K) ≥0.01 wt.-% to ≤1.50 wt.-% of at least one additive,
wherein the chemical mechanical polishing composition has a pH of ≥8.5 to ≤11.0, and
wt.-% is based on a total weight of the chemical mechanical polishing composition;
wherein the composition contains no oxidant other than (c); and
wherein a TiN:TaN ratio of material removal rate (MRR) is in a range of ≥0.5 to ≤2.0.
 
13. A process for the manufacture of a semiconductor device, the process comprising chemical mechanical polishing of a substrate comprising
(i) cobalt, and/or
(ii) a cobalt alloy, and
(iii) TiN and TaN in the presence of a chemical mechanical polishing composition, comprising:
(A) ≥0.10 wt.-% to ≤4.00 wt.-% of inorganic particles,
(B) ≥0.10 wt.-% to ≤0.90 wt.-% of at least one organic compound comprising an amino group and/or at least one acid group (Y),
(C) ≥0.20 wt.-% to ≤0.90 wt.-% of potassium persulfate,
(D) ≥95.00 wt.-% to ≤99.58 wt.-% of an aqueous medium,
(E) ≥0.01 wt.-% to ≤0.50 wt.-% of at least one corrosion inhibitor, and
(K) ≥0.01 wt.-% to ≤1.50 wt.-% of at least one additive,
wherein the chemical mechanical polishing composition has a pH of ≥8.5 to ≤11.0, and
wt.-% is based on a total weight of the chemical mechanical polishing composition;
wherein the composition contains no oxidant other than (c).; and
wherein a TiN:TaN ratio of material removal rate (MRR) is in a range of ≥0.5 to ≤2.0.