US 11,993,686 B2
Surface treatment method of a polymer for 5G
Bin Liao, Beijing (CN); Xiao Ouyang, Beijing (CN); Guoliang Wang, Beijing (CN); Xiaoping Ouyang, Beijing (CN); Jun Luo, Beijing (CN); Pan Pang, Beijing (CN); Lin Chen, Beijing (CN); Xu Zhang, Beijing (CN); Xianying Wu, Beijing (CN); and Minju Ying, Beijing (CN)
Assigned to Beijing Normal University, Beijing (CN); and Guangdong Guangxin Ion Beam Technology Co., Ltd., Guangzhou (CN)
Filed by Beijing Normal University, Beijing (CN); and Guangdong Guangxin Ion Beam Technology Co., Ltd., Guangdong (CN)
Filed on Jul. 20, 2020, as Appl. No. 16/933,116.
Claims priority of application No. 202010350044.2 (CN), filed on Apr. 28, 2020.
Prior Publication US 2021/0332196 A1, Oct. 28, 2021
Int. Cl. H01L 21/26 (2006.01); C08J 3/20 (2006.01)
CPC C08J 3/20 (2013.01) [C08J 2379/08 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A surface treatment method of a polymer for 5G, comprising the steps of:
S1. proceed oxygen insertion by using a Penning ion source on the surface of the polymer, controlling a roughness of the polymer surface to change greater than 0 μm and less than or equal to 0.1 μm, obtaining a first polymer;
S2. proceed oxygen addition by using a Kaufman ion source on a surface of the first polymer, controlling a roughness of the first polymer surface to change greater than 0 μm and less than or equal to 0.1 μm, obtaining a second polymer;
S3. repeat steps S1 and S2 until the surface resistance of the second polymer is less than or equal to 1015Ω;
S4. proceed hydrogen abstraction by using a Hall ion source on the surface of the second polymer, obtaining a third polymer;
S5. repeat steps S1-S4 until the surface roughness of the third polymer is 0.1˜0.4 μm; wherein the oxygen insertion in S1 has an oxygen flow ranging from 5 sccm to 80 sccm, a voltage ranging from 20 kV to 40 kV, and a beam intensity ranging from 1 mA to 50 mA, the oxygen addition in S2 has an oxygen flow ranging from 20 sccm to 100 sccm, a voltage ranging from 10 kV to 20 kV, and a beam intensity ranging from 5 mA to 150 mA, and the hydrogen abstraction has an argon flow ranging from 50 sccm to 150 sccm, a voltage ranging from 0.1 kV to 1 kV, and a beam intensity ranging from 200 mA to 1000 mA.