US 12,317,764 B2
Uniform voltage drop in arrays of memory devices
Injo Ok, Loudonville, NY (US); Soon-Cheon Seo, Glenmont, NY (US); Alexander Reznicek, Troy, NY (US); and Youngseok Kim, Upper Saddle River, NJ (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Nov. 6, 2020, as Appl. No. 17/091,513.
Prior Publication US 2022/0149275 A1, May 12, 2022
Int. Cl. H10N 70/20 (2023.01); H01L 23/522 (2006.01); H10B 63/00 (2023.01); H10B 63/10 (2023.01); H10D 1/47 (2025.01); H10N 70/00 (2023.01); G11C 13/00 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01)
CPC H10N 70/8413 (2023.02) [H01L 23/5228 (2013.01); H10B 63/80 (2023.02); H10D 1/474 (2025.01); H10N 70/011 (2023.02); H10N 70/231 (2023.02); H10N 70/826 (2023.02); H10N 70/8828 (2023.02); G11C 13/0004 (2013.01); G11C 2213/77 (2013.01); H01L 21/76807 (2013.01); H01L 21/76834 (2013.01); H01L 23/528 (2013.01); H01L 23/53261 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A phase change memory (PCM) device, comprising:
at least one PCM cell comprising a phase change material disposed on a heater, wherein the heater is entirely below a bottommost surface of the phase change material of the at least one PCM cell;
at least one resistor electrically connected in series with the at least one PCM cell, wherein the at least one resistor comprises a same combination of materials as the heater, wherein a top surface of the heater is coplanar with a top surface of the at least one resistor; and
an electrical interconnect in direct contact with both a top electrode of the at least one PCM cell and an end of the at least one resistor.