US 12,317,636 B2
Solar cell and photovoltaic module
Jingsheng Jin, Zhejiang (CN); Xinyu Zhang, Zhejiang (CN); Nannan Yang, Zhejiang (CN); Bike Zhang, Zhejiang (CN); Lin'an Zhang, Zhejiang (CN); and Guangming Liao, Zhejiang (CN)
Assigned to ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed by ZHEJIANG JINKO SOLAR CO., LTD., Zhejiang (CN); and JINKO SOLAR CO., LTD., Jiangxi (CN)
Filed on May 5, 2023, as Appl. No. 18/313,296.
Application 18/313,296 is a continuation of application No. 17/666,532, filed on Feb. 7, 2022, granted, now 11,735,675.
Claims priority of application No. 202111501018.6 (CN), filed on Dec. 9, 2021.
Prior Publication US 2023/0275163 A1, Aug. 31, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10F 77/30 (2025.01); H10F 19/80 (2025.01); H10F 71/00 (2025.01); H10F 77/20 (2025.01); H10F 77/70 (2025.01)
CPC H10F 77/311 (2025.01) [H10F 19/80 (2025.01); H10F 71/00 (2025.01); H10F 77/211 (2025.01); H10F 77/703 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A solar cell, comprising:
a substrate;
a tunneling dielectric layer and a doped conductive layer disposed on the substrate, wherein the tunneling dielectric layer is disposed between the doped conductive layer and a surface of the substrate, the doped conductive layer has a plurality of first heavily doped regions spaced apart from each other and each extending in a first direction, and a doping concentration in the plurality of first heavily doped regions is greater than a doping concentration in other regions of the doped conductive layer;
a passivation layer disposed on a surface of the doped conductive layer facing away from the substrate; and
a plurality of electrodes extending in a second direction and spaced apart from each other, wherein the plurality of electrodes penetrate the passivation layer to contact the doped conductive layer, and at least two of the plurality of first heavily doped regions are in contact with a same electrode, wherein
the substrate has a plurality of second heavily doped regions, each of the plurality of second heavily doped regions is aligned with a respective one of the plurality of first heavily doped regions, and the plurality of first heavily doped regions and the plurality of second heavily doped regions having doping elements of a same type; wherein a doping concentration in the plurality of second heavily doped regions is greater than a doping concentration in other regions of the substrate; and
the tunneling dielectric layer has a plurality of third heavily doped regions, each of the plurality of third heavily doped regions is aligned and in contact with a respective one of the plurality of first heavily doped regions and extends through the tunneling dielectric layer along a thickness direction of the tunneling dielectric layer to contact a respective one the plurality of second heavily doped regions, and the plurality of first heavily doped regions and the plurality of third heavily doped regions have doping elements of a same type.