US 12,317,630 B2
Image sensor and electronic apparatus including the same
Ji-Won Lee, Daegu (KR); Jeong-Jin Cho, Suwon-si (KR); Moo-Sup Lim, Yongin-si (KR); Sung-Young Seo, Bucheon-si (KR); and Hae-Won Lee, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 11, 2022, as Appl. No. 17/717,422.
Application 17/717,422 is a division of application No. 16/797,193, filed on Feb. 21, 2020, granted, now 11,302,737.
Application 16/797,193 is a continuation of application No. 15/854,356, filed on Dec. 26, 2017, granted, now 10,608,037, issued on Mar. 31, 2020.
Claims priority of application No. 10-2016-0180138 (KR), filed on Dec. 27, 2016.
Prior Publication US 2022/0231073 A1, Jul. 21, 2022
Int. Cl. H10F 39/00 (2025.01); H04N 25/77 (2023.01); H10F 39/18 (2025.01)
CPC H10F 39/813 (2025.01) [H04N 25/77 (2023.01); H10F 39/18 (2025.01); H10F 39/802 (2025.01); H10F 39/8037 (2025.01); H10F 39/811 (2025.01)] 7 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a first shared pixel including eight photodiodes that share a floating diffusion (FD) area, the eight photodiodes forming four photodiode pairs, each of the photodiode pairs including two adjacent photodiodes arranged along a first direction; and
a first transistor (TR) set disposed adjacent to the first shared pixel and comprising a top selection TR, a top source follower TR, a top reset TR, a bottom reset TR, a bottom source follower TR, and a bottom selection TR, which are arranged along a second direction crossing the first direction in the order of the top selection TR, the top source follower TR, the top reset TR, the bottom reset TR, the bottom source follower TR and the bottom selection TR,
wherein the first TR set has a mirror symmetry structure with respect to an equivalent FD area shared by the top reset TR and the bottom reset TR.