US 12,317,628 B2
Image sensor package
Yu-Te Hsieh, Taoyuan (TW)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Apr. 20, 2022, as Appl. No. 17/659,901.
Prior Publication US 2023/0343806 A1, Oct. 26, 2023
Int. Cl. H10D 84/80 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/811 (2025.01) [H10F 39/011 (2025.01); H10F 39/18 (2025.01); H10F 39/804 (2025.01); H10F 39/8063 (2025.01)] 21 Claims
OG exemplary drawing
 
1. A package comprising:
a substrate made of a stack of dielectric insulating material layers interleaved with conductive layers, the substrate including a first cavity at a first vertical height from a bottom surface of the substrate and a second cavity at a second vertical height greater than the first vertical height from the bottom surface of the substrate, wherein a sidewall of the first cavity includes a sub stack of the stack of dielectric insulating material layers interleaved with the conductive layers;
an integrated circuit die disposed in the first cavity;
a digital image sensor die disposed in the second cavity; and
a transparent cover disposed at a top of the substrate over the second cavity.