US 12,317,626 B2
Photoelectric conversion apparatus and camera
Nobutaka Ukigaya, Yokohama (JP); and Hideshi Kuwabara, Yamato (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Sep. 11, 2023, as Appl. No. 18/465,072.
Application 18/465,072 is a continuation of application No. 17/813,510, filed on Jul. 19, 2022, granted, now 11,791,360.
Application 17/813,510 is a continuation of application No. 16/717,252, filed on Dec. 17, 2019, granted, now 11,430,822, issued on Aug. 30, 2022.
Application 16/717,252 is a continuation of application No. 15/468,865, filed on Mar. 24, 2017, granted, now 10,553,634, issued on Feb. 4, 2020.
Claims priority of application No. 2016-072989 (JP), filed on Mar. 31, 2016.
Prior Publication US 2023/0420474 A1, Dec. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10F 39/00 (2025.01); H04N 5/76 (2006.01); H04N 23/63 (2023.01); H04N 25/75 (2023.01); H10F 39/12 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/807 (2025.01) [H04N 25/75 (2023.01); H10F 39/014 (2025.01); H10F 39/199 (2025.01); H04N 5/76 (2013.01); H04N 23/63 (2023.01); H10F 39/182 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/813 (2025.01)] 22 Claims
OG exemplary drawing
 
1. A photoelectric conversion apparatus comprising:
a semiconductor layer having a first surface and a second surface being opposite to the first surface;
a first photoelectric conversion element;
a first floating diffusion region;
a first gate electrode of a first transfer transistor, the first gate electrode being arranged between the first photoelectric conversion element and the first floating diffusion region;
a second photoelectric conversion element;
a second floating diffusion region;
a second gate electrode of a second transfer transistor, the second gate electrode being arranged between the second photoelectric conversion element and the second floating diffusion region;
a first isolating portion including a first groove, the first groove being arranged in the semiconductor layer and passing through a virtual plane located between the first surface and the second surface and provided along the second surface;
a second isolating portion including a second groove, the second groove being arranged in the semiconductor layer and passing through the virtual plane; and
a well contact region connected to a conductive member for supplying a potential,
wherein the first isolating portion intersects with the second isolating portion in a planar view,
wherein the second isolating portion is arranged between the first photoelectric conversion element and the second photoelectric conversion element in the planar view, and
wherein the well contact region is arranged between the first floating diffusion region and the second floating diffusion region in the planar view.