US 12,317,624 B2
Photoelectric conversion apparatus having avalanche diodes, system and movable body
Kazuhiro Morimoto, Kanagawa (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Aug. 23, 2022, as Appl. No. 17/821,737.
Claims priority of application No. 2021-144929 (JP), filed on Sep. 6, 2021.
Prior Publication US 2023/0069887 A1, Mar. 9, 2023
Int. Cl. H10F 39/18 (2025.01); H10F 39/00 (2025.01)
CPC H10F 39/8057 (2025.01) [H10F 39/18 (2025.01); H10F 39/806 (2025.01); H10F 39/8063 (2025.01); H10F 39/8067 (2025.01); H10F 39/807 (2025.01)] 22 Claims
OG exemplary drawing
 
1. A photoelectric conversion apparatus comprising:
a plurality of avalanche diodes disposed in a semiconductor layer having a first surface and a second surface facing the first surface; and
a light shielding portion having an opening, the light shielding portion covering at least part of the first surface,
wherein each of the plurality of avalanche diodes includes a first semiconductor region of a first conductivity type disposed at a first depth, and a second semiconductor region of a second conductivity type disposed at a second depth deeper than the first depth with respect to the second surface,
wherein the semiconductor layer includes a plurality of uneven structures provided on the first surface, and
wherein, in a planar view from a direction perpendicular to the first surface, the second semiconductor region overlaps the light shielding portion, and the first semiconductor region is included in the opening.