US 12,317,612 B2
Semiconductor apparatus and method for manufacturing the same
Nobutoshi Fujii, Kanagawa (JP); Koichi Sejima, Kanagawa (JP); Koichiro Saga, Kanagawa (JP); and Shinichi Miyake, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/620,253
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Jun. 26, 2020, PCT No. PCT/JP2020/025147
§ 371(c)(1), (2) Date Dec. 17, 2021,
PCT Pub. No. WO2020/262584, PCT Pub. Date Dec. 30, 2020.
Claims priority of application No. 2019-119169 (JP), filed on Jun. 26, 2019.
Prior Publication US 2022/0367558 A1, Nov. 17, 2022
Int. Cl. H10D 89/10 (2025.01); H01L 21/31 (2006.01); H01L 21/768 (2006.01); H10D 89/60 (2025.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/011 (2025.01) [H01L 21/31 (2013.01); H01L 21/768 (2013.01); H10F 39/18 (2025.01); H10F 39/8037 (2025.01); H10F 39/805 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor apparatus, comprising:
a first semiconductor layer including a plurality of element formation regions disposed adjacent to one another via element isolation regions, each of the plurality of element formation regions being provided with a first active element;
contact regions each provided on a side of the element isolation region of a front layer portion of each of the plurality of element formation regions;
conductive pads connected to the contact regions of the respective plurality of element formation regions, the conductive pads extending across the element isolation region;
a first insulating layer covering the first semiconductor layer and the conductive pads;
a second semiconductor layer disposed on the first insulating layer and provided with a second active element;
a second insulating layer covering the second semiconductor layer; and
conductive plugs each embedded in a connection hole extending from the second insulating layer to a corresponding conductive pad, wherein each conductive plug includes a material that is identical to a material of the corresponding conductive pad, wherein each conductive plug is formed integrally with the corresponding conductive pad, and
wherein each conductive pad is larger in area in plan view than the corresponding conductive plug.