US 12,317,600 B2
Semiconductor material and semiconductor device
Hitoshi Kunitake, Kanagawa (JP); and Shuhei Nagatsuka, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Appl. No. 16/964,115
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
PCT Filed Jan. 17, 2019, PCT No. PCT/IB2019/050375
§ 371(c)(1), (2) Date Jul. 22, 2020,
PCT Pub. No. WO2019/145827, PCT Pub. Date Aug. 1, 2019.
Claims priority of application No. 2018-010564 (JP), filed on Jan. 25, 2018.
Prior Publication US 2021/0036025 A1, Feb. 4, 2021
Int. Cl. H10D 87/00 (2025.01); H10D 86/80 (2025.01)
CPC H10D 87/00 (2025.01) [H10D 86/80 (2025.01)] 3 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a transistor comprising a first conductor, a second conductor, a third conductor, and an oxide semiconductor over a semiconductor substrate;
a first diode element;
a second diode element; and
a third diode element,
wherein the first to third diode elements are in the semiconductor substrate, and
wherein charged charges in the transistor move to the semiconductor substrate through the first diode element, the second diode element, and the third diode element.