| CPC H10D 84/84 (2025.01) [H03K 17/6871 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 64/602 (2025.01); H10D 84/05 (2025.01)] | 20 Claims |
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1. A method, comprising:
providing a substrate;
forming a plurality of active portions over the substrate;
forming a plurality of polarization modulation portions each of which is disposed on a corresponding one of the plurality of active portions; and
forming a plurality of transistors each of which is formed on a corresponding one of the plurality of polarization modulation portions, wherein:
a first transistor of the plurality of transistors has a first gate structure comprising a first material,
a second transistor of the plurality of transistors has a second gate structure comprising a second material different from the first material,
a first threshold voltage of the first transistor has a first fixed value, and
a second threshold voltage of the second transistor has a second fixed value that is different from the first fixed value.
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