US 12,317,569 B2
Semiconductor device with multichannel heterostructure and manufacturing method thereof
Anbang Zhang, Zhuhai (CN); King Yuen Wong, Zhuhai (CN); Hao Li, Zhuhai (CN); Haoning Zheng, Zhuhai (CN); and Jian Wang, Zhuhai (CN)
Assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
Filed by INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
Filed on Apr. 26, 2024, as Appl. No. 18/646,773.
Application 18/646,773 is a division of application No. 17/266,637, granted, now 12,009,396, previously published as PCT/CN2020/086134, filed on Apr. 22, 2020.
Prior Publication US 2024/0297231 A1, Sep. 5, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 64/23 (2025.01); H10D 30/47 (2025.01); H10D 30/63 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01)
CPC H10D 64/256 (2025.01) [H10D 30/475 (2025.01); H10D 30/637 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor heterostructure layer, comprising alternating first semiconductor material layers and second semiconductor material layers, wherein a two-dimensional hole gas (2DHG) is generated between each first semiconductor material layer and its above adjacent second semiconductor material layer;
a first electrode structure, comprising a plurality of first conductive fingers extending from a surface of the semiconductor heterostructure layer into the semiconductor heterostructure layer, wherein the plurality of first conductive fingers are arranged in a first direction substantially parallel to the surface, and wherein lengths of the plurality of first conductive fingers progressively increase in the first direction so that an end portion of each first conductive finger is respectively positioned in a different first semiconductor material layer and is in contact with the 2DHGs;
a second electrode structure, comprising a plurality of second conductive fingers extending from the surface into the semiconductor heterostructure layer, wherein the plurality of second conductive fingers are arranged in the first direction, and wherein lengths of the plurality of second conductive fingers progressively decrease in the first direction so that an end portion of each second conductive finger is respectively positioned in a different second semiconductor material layer and is not in contact with the 2DHGs.