US 12,317,532 B2
Semiconductor device and method for manufacturing the same
Yi-Lun Chou, Suzhou (CN); Kye Jin Lee, Suzhou (CN); Han-Chin Chiu, Suzhou (CN); and Xiuhua Pan, Suzhou (CN)
Assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
Filed by INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD., Suzhou (CN)
Filed on Jul. 20, 2021, as Appl. No. 17/380,044.
Application 17/380,044 is a continuation of application No. 17/420,718, granted, now 12,148,713, previously published as PCT/CN2021/086526, filed on Apr. 12, 2021.
Prior Publication US 2022/0328677 A1, Oct. 13, 2022
Int. Cl. H10D 30/47 (2025.01); H01L 21/02 (2006.01); H10D 62/17 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/475 (2025.01) [H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02507 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H10D 62/357 (2025.01); H10D 62/8503 (2025.01); H10D 62/343 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a nucleation layer comprising a composition that includes a first element and disposed on and forming an interface with the substrate;
a buffer layer comprising a III-V compound which includes the first element, the buffer layer disposed on and forming an interface with the nucleation layer, wherein the buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer, wherein an oscillation rate in the concentration of the first element per unit thickness of the buffer layer varies with respect to a first reference point within the buffer layer, wherein the oscillating function comprises a sine wave or a cosine wave;
a first nitride-based semiconductor layer disposed on and forming an interface with the buffer layer, wherein the concentration of the first element within the buffer layer first oscillates with respect to the first reference point so that peaks of the concentration remain as a positive steady value and troughs of the concentration increase toward the positive steady value, and then the concentration drops to 0 at the interface between the buffer layer and the first nitride-based semiconductor layer;
a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap greater than a bandgap of the first nitride-based semiconductor layer, so as to form a heterojunction therebetween with a two-dimensional electron gas (2DEG) region; and
at least two source/drain (S/D) electrodes and a gate electrode disposed over the second nitride-based semiconductor layer, wherein the gate electrode is between the S/D electrodes.