US 12,317,526 B2
Multi-gate devices and fabricating the same with etch rate modulation
Chih-Ching Wang, Kinmen County (TW); Chung-I Yang, Hsinchu (TW); Jon-Hsu Ho, New Taipei (TW); Wen-Hsing Hsieh, Hsinchu (TW); Kuan-Lun Cheng, Hsin-Chu (TW); Chung-Wei Wu, Hsin-Chu County (TW); and Zhiqiang Wu, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu (TW)
Filed on Apr. 1, 2024, as Appl. No. 18/623,143.
Application 17/699,362 is a division of application No. 16/901,881, filed on Jun. 15, 2020, granted, now 11,282,943, issued on Mar. 22, 2022.
Application 18/623,143 is a continuation of application No. 17/699,362, filed on Mar. 21, 2022, granted, now 11,949,001.
Prior Publication US 2024/0258407 A1, Aug. 1, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 30/0243 (2025.01) [H10D 30/62 (2025.01); H10D 30/6219 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
channel members vertically stacked above a substrate;
a gate structure engaging the channel members;
a gate sidewall spacer disposed on a sidewall of the gate structure;
an epitaxial feature abutting end portions of the channel members; and
inner spacers interposing the gate structure and the epitaxial feature,
wherein:
the end portion of at least one of the channel members includes a first dopant,
a concentration of the first dopant in the end portion of the at least one of the channel members is higher than in a center portion of the at least one of the channel members, and
the concentration of the first dopant in the end portion of the at least one of the channel members is higher than in an outer portion of the epitaxial feature.