US 12,316,987 B2
Solid-state imaging device
Satoko Iida, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Appl. No. 17/998,250
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Mar. 29, 2021, PCT No. PCT/JP2021/013354
§ 371(c)(1), (2) Date Nov. 8, 2022,
PCT Pub. No. WO2021/235101, PCT Pub. Date Nov. 25, 2021.
Claims priority of application No. 2020-088488 (JP), filed on May 20, 2020.
Prior Publication US 2023/0224602 A1, Jul. 13, 2023
Int. Cl. H04N 25/63 (2023.01); H04N 25/59 (2023.01); H04N 25/771 (2023.01); H04N 25/778 (2023.01); H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H04N 25/63 (2023.01) [H04N 25/59 (2023.01); H04N 25/771 (2023.01); H04N 25/778 (2023.01); H10F 39/80373 (2025.01); H10F 39/182 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A solid-state imaging device, comprising:
a photoelectric converter of a plurality of photoelectric converters in a semiconductor substrate,
wherein the photoelectric converter is configured to generate a photocharge;
a transfer gate transistor as a vertical transistor, wherein
the transfer gate transistor is at a surface of the semiconductor substrate, and
the transfer gate transistor is configured to read the photocharge from the photoelectric converter; and
an overflow gate transistor as a planar transistor, wherein
the overflow gate transistor is at the surface of the semiconductor substrate,
the overflow gate transistor is configured to transfer the photocharge that overflows from the photoelectric converter,
an arrangement of the overflow gate transistor is in a first direction in a plane of the semiconductor substrate with respect to the photoelectric converter,
the transfer of the photocharge is in a second direction orthogonal to the first direction in the plane of the semiconductor substrate,
the overflow gate transistor includes a planar gate electrode that has a polygonal shape including at least two sides,
a first side of the at least two sides of the polygonal shape is opposite to a second side of the at least two sides of the polygonal shape,
the first side of the polygonal shape is parallel to the second side of the polygonal shape,
the planar gate electrode has the polygonal shape in which a corner is removed from a rectangular shape,
the corner is on a first side of the rectangular shape in the second direction,
the photoelectric converter is on a second side of the rectangular shape in the first direction, and
in the first direction, the corner is on a third side of the rectangular shape opposite to the second side of the rectangular shape.