US 12,316,245 B2
Semiconductor device
Katsumi Satoh, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Dec. 30, 2022, as Appl. No. 18/148,639.
Claims priority of application No. 2022-042382 (JP), filed on Mar. 17, 2022.
Prior Publication US 2023/0299691 A1, Sep. 21, 2023
Int. Cl. H02M 7/53 (2006.01); H02M 1/00 (2006.01); H02M 1/08 (2006.01); H02M 7/537 (2006.01)
CPC H02M 7/537 (2013.01) [H02M 1/0051 (2021.05); H02M 1/08 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bidirectional current-conduction device including a transistor, and a body diode included in the transistor so that the body diode is anti-parallel to the transistor; and
a diode anti-parallel connected to the bidirectional current-conduction device,
wherein the bidirectional current-conduction device allows a first current and a second current to flow, and allows at least the second current to switch between conduction and non-conduction, the first current flowing in a first direction from a first main electrode of the transistor to a second main electrode facing the first main electrode, the second current flowing through the body diode in a second direction opposite to the first direction, and
the diode is smaller in area than the bidirectional current-conduction device in a plan view.