US 12,316,077 B2
Light emitting apparatus and projector
Shunsuke Ishizawa, Tokyo-to (JP); and Katsumi Kishino, Akiruno (JP)
Assigned to SEIKO EPSON CORPORATION, Tokyo (JP); and SOPHIA SCHOOL CORPORATION, Tokyo (JP)
Filed by SEIKO EPSON CORPORATION, Tokyo (JP); and SOPHIA SCHOOL CORPORATION, Tokyo (JP)
Filed on Feb. 24, 2022, as Appl. No. 17/680,247.
Claims priority of application No. 2021-030042 (JP), filed on Feb. 26, 2021.
Prior Publication US 2022/0278508 A1, Sep. 1, 2022
Int. Cl. H01S 5/343 (2006.01); G03B 21/20 (2006.01)
CPC H01S 5/34333 (2013.01) [G03B 21/2033 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A light emitting apparatus comprising:
a substrate; and
a laminated structure provided at the substrate and including a plurality of columnar sections,
wherein the plurality of columnar sections each includes
a light emitting layer including a plurality of first well layers,
a first semiconductor layer provided between the substrate and the light emitting layer and containing Ga and N,
an optical confining layer provided between the first semiconductor layer and the light emitting layer and confining light in the light emitting layer, and
a second well layer provided between the first semiconductor layer and the optical confining layer,
the first well layers and the second well layer are made of InGaN,
the optical confining layer includes an InGaN layer,
a composition formula of each of the first well layers is InxGa1-xN,
a composition formula of the InGaN layer of the optical confining layer is InyGa1-yN,
a composition formula of the second well layer is InzGa1-zN, and
the parameters x, y, and z satisfy 0<y<z<x<1,
wherein in each of the plurality of columnar sections,
a diameter of the InGaN layer of the optical confining layer is greater than a diameter of the second well layer, or
a thickness of each of the first well layers is greater than a thickness of the second well layer and a thickness of the InGaN layer of the optical confining layer, or
a bandgap of the second well layer and a bandgap of the optical confining layer are wider than a bandgap of each of the first well layers.