US 12,315,863 B2
Contact structures in semiconductor devices
Mrunal Abhijith Khaderbad, Hsinchu (TW); Wei-Yen Woon, Hsinchu (TW); Cheng-Ming Lin, Kaohsiung (TW); Han-Yu Lin, Hsinchu (TW); and Szu-Hua Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Nov. 23, 2021, as Appl. No. 17/533,575.
Claims priority of provisional application 63/166,573, filed on Mar. 26, 2021.
Prior Publication US 2022/0310800 A1, Sep. 29, 2022
Int. Cl. H01L 21/67 (2006.01); H01L 21/285 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01)
CPC H01L 29/401 (2013.01) [H01L 21/28518 (2013.01); H01L 21/28525 (2013.01); H01L 21/28568 (2013.01); H01L 29/41733 (2013.01); H01L 29/41791 (2013.01); H01L 29/42392 (2013.01); H01L 29/456 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a fin structure on a substrate;
forming a gate structure on the fin structure;
forming a source/drain (S/D) region on the fin structure not covered by the gate structure; and
forming a contact structure on the S/D region, wherein forming the contact structure comprises:
forming a liner layer on the S/D region;
forming, after etching a portion of the liner layer from a top surface of the S/D region, a transition metal chalcogenide (TMC) layer comprising a bottom surface in contact with the top surface of the S/D region and a first sidewall in contact with a first portion of the liner layer; and
forming a contact plug comprising a bottom surface in contact with a top surface of the TMC layer and a second sidewall in contact with a second portion of the liner layer.