US 12,315,819 B2
Method of forming RDLs and structure formed thereof
Hung-Jui Kuo, Hsinchu (TW); Yun Chen Hsieh, Baoshan Township (TW); Chen-Hua Yu, Hsinchu (TW); and Hui-Jung Tsai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Mar. 6, 2023, as Appl. No. 18/179,083.
Application 17/121,020 is a division of application No. 16/157,391, filed on Oct. 11, 2018, granted, now 10,886,231, issued on Jan. 5, 2021.
Application 18/179,083 is a continuation of application No. 17/121,020, filed on Dec. 14, 2020, granted, now 11,600,574.
Claims priority of provisional application 62/691,971, filed on Jun. 29, 2018.
Prior Publication US 2023/0207478 A1, Jun. 29, 2023
Int. Cl. H01L 23/538 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 25/00 (2006.01); H01L 25/10 (2006.01)
CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3107 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/214 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a device die;
a first plurality of conductive features over and electrically coupling to the device die, wherein the first plurality of conductive features comprise first top widths, and first bottom widths greater than respective first top widths; and
a second plurality of conductive features over and electrically coupling to the device die through the first plurality of conductive features, wherein the second plurality of conductive features comprise second top widths, and second bottom widths smaller than respective second top widths.