US 12,315,814 B2
Semiconductor device and electronic system including same
Chung-Ho Yu, Hwaseong-si (KR); and Hongsoo Jeon, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Mar. 25, 2022, as Appl. No. 17/704,701.
Claims priority of application No. 10-2021-0121298 (KR), filed on Sep. 10, 2021.
Prior Publication US 2023/0080436 A1, Mar. 16, 2023
Int. Cl. H10B 41/27 (2023.01); H01L 23/535 (2006.01); H10B 41/41 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01)
CPC H01L 23/535 (2013.01) [H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first transistor on a substrate and including a first gate electrode;
a second transistor on the substrate and including a second gate electrode adjacent to the first gate electrode in a first direction;
an electrode structure including electrodes vertically stacked on the first transistor and the second transistor, wherein the electrode structure includes a first pad and a second pad adjacent to each other in the first direction;
a first landing pad and a second landing pad between the substrate and the electrode structure, the first landing pad connected to the first transistor, and the second landing pad connected to the second transistor;
a first penetration electrode penetrating the electrode structure to connect the first landing pad and the first pad;
a second penetration electrode penetrating the electrode structure to connect the second landing pad and the second pad; and
lower interconnection lines between the first landing pad and the second landing pad and extending in a second direction perpendicular to the first direction,
wherein a length of the second landing pad in the second direction is less than a length of one of the lower interconnection lines in the second direction.