US 12,315,810 B2
Integrated assemblies having graphene-containing-structures
Santanu Sarkar, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 3, 2023, as Appl. No. 18/143,027.
Application 18/143,027 is a division of application No. 17/375,345, filed on Jul. 14, 2021, granted, now 11,682,623.
Prior Publication US 2023/0307367 A1, Sep. 28, 2023
Int. Cl. H01L 23/532 (2006.01); H01L 21/768 (2006.01); H10D 48/01 (2025.01); H10D 62/80 (2025.01); H10D 62/83 (2025.01); H10D 86/40 (2025.01)
CPC H01L 23/53276 (2013.01) [H01L 23/53261 (2013.01); H01L 23/5329 (2013.01); H10D 48/01 (2025.01); H10D 62/8303 (2025.01); H10D 62/882 (2025.01); H10D 86/425 (2025.01); H01L 21/76807 (2013.01); H01L 21/76843 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
a first insulative material supported by a semiconductor substrate;
a second insulative material over the first insulative material;
a first graphene-containing-material supported by the first insulative material; the first graphene-containing-material including a first stack of multiple first graphene planes and including first metal interspersed between the first graphene planes within the first stack;
a second graphene-containing-material supported by the second insulative material; the second graphene-containing-material including a second stack of multiple second graphene planes and including second metal interspersed between the second graphene planes within the second stack; and
a conductive interconnect coupling the first graphene-containing-material with the second graphene-containing-material.