US 12,315,733 B2
Enhanced etch selectivity using halides
David Knapp, Santa Clara, CA (US); Feng Qiao, San Jose, CA (US); Hailong Zhou, San Jose, CA (US); Junkai He, San Jose, CA (US); Qian Fu, Pleasanton, CA (US); Mark J. Saly, Santa Clara, CA (US); Jeffrey Anthis, Redwood City, CA (US); and Jayoung Choi, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 1, 2024, as Appl. No. 18/429,554.
Claims priority of provisional application 63/443,785, filed on Feb. 7, 2023.
Prior Publication US 2024/0266180 A1, Aug. 8, 2024
Int. Cl. H01L 21/3065 (2006.01); H10B 12/00 (2023.01)
CPC H01L 21/3065 (2013.01) [H10B 12/01 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers, wherein the first layer comprises a first material and the second layer comprises a second material different from the first material, wherein the dry etch process forms a passivation layer comprising a byproduct on surfaces of the second material, and wherein an amount of first material of the portion of the first layer remains after performing the dry etch process; and
introducing a halide gas to at least partially repair the passivation layer on the surfaces of the second material.