| CPC H01L 21/28088 (2013.01) [H10D 64/667 (2025.01)] | 20 Claims |
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1. A method comprising:
providing a structure having a substrate, a semiconductor channel layer over the substrate, an interfacial oxide layer over the semiconductor channel layer, and a high-k gate dielectric layer over the interfacial oxide layer, wherein the semiconductor channel layer includes germanium;
forming a metal nitride layer over the high-k gate dielectric layer;
performing a first treatment to the structure using a metal-containing gas;
after the performing of the first treatment, depositing a silicon layer over the metal nitride layer; and
after the depositing of the silicon layer, annealing the structure such that a metal intermixing layer is formed over the high-k gate dielectric layer, wherein the metal intermixing layer includes a metal oxide having metal species from the high-k gate dielectric layer and additional metal species from the metal-containing gas.
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