US 12,315,727 B2
Eliminating yield impact of stochastics in lithography
Nader Shamma, Cupertino, CA (US); Richard Wise, Los Gatos, CA (US); Jengyi Yu, San Ramon, CA (US); and Samantha S.H. Tan, Newark, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Dec. 23, 2021, as Appl. No. 17/645,939.
Application 17/645,939 is a division of application No. 17/008,095, filed on Aug. 31, 2020, granted, now 11,257,674.
Application 17/008,095 is a division of application No. 15/979,340, filed on May 14, 2018, granted, now 10,796,912, issued on Oct. 6, 2020.
Claims priority of provisional application 62/506,803, filed on May 16, 2017.
Prior Publication US 2022/0122846 A1, Apr. 21, 2022
Int. Cl. H01L 21/67 (2006.01); H01L 21/033 (2006.01); H01L 21/677 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/0338 (2013.01) [H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/67703 (2013.01); H01L 21/02115 (2013.01); H01L 21/02274 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01)] 13 Claims
OG exemplary drawing
 
1. An apparatus for processing semiconductor substrates, the apparatus comprising:
one or more process chambers, each process chamber comprising a chuck;
one or more gas inlets into the process chambers and associated flow-control hardware;
a plasma generator; and
a controller having at least one processor and a memory, wherein
the at least one processor and the memory are communicatively connected with one another,
the at least one processor is at least operatively connected with the flow-control hardware, and
the memory stores computer-executable instructions for controlling the at least one processor to at least control the flow-control hardware by:
causing introduction of a hard mask deposition precursor, the hard mask deposition precursor to be flowed to preferentially deposit more material at a bottom of a second feature than at the bottom of a first feature on a substrate;
after introducing the hard mask deposition precursor, causing stopping of the introduction of the hard mask deposition precursor;
after stopping the introduction of the hard mask deposition precursor, causing introduction of a modification gas; and
after introduction of the modification gas, causing introduction of an inert gas and generation of a plasma,
wherein introduction of the hard mask deposition precursor, modification gas, and inert gas are performed without breaking vacuum.