US 12,315,724 B2
Helium-free silicon formation
Zeqiong Zhao, Santa Clara, CA (US); Allison Yau, Mountain View, CA (US); Sang-Jin Kim, San Jose, CA (US); Akhil Singhal, Portland, OR (US); Zhijun Jiang, San Jose, CA (US); Deenesh Padhi, Sunnyvale, CA (US); and Ganesh Balasubramanian, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Apr. 20, 2021, as Appl. No. 17/235,222.
Prior Publication US 2022/0336216 A1, Oct. 20, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/24 (2006.01); C23C 16/40 (2006.01); C23C 16/46 (2006.01); C23C 16/50 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01)
CPC H01L 21/02532 (2013.01) [C23C 16/24 (2013.01); C23C 16/401 (2013.01); C23C 16/46 (2013.01); C23C 16/50 (2013.01); C23C 16/56 (2013.01); H01J 37/32449 (2013.01); H01L 21/02164 (2013.01); H01L 21/02592 (2013.01); H01L 21/0262 (2013.01); H01L 21/02664 (2013.01); H01J 2237/332 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A deposition method comprising:
delivering a silicon-containing precursor and an inert gas to a processing region of a semiconductor processing chamber;
providing a hydrogen-containing precursor with the silicon-containing precursor and the inert gas;
forming a plasma of all precursors within the processing region of the semiconductor processing chamber, wherein a plasma power is maintained at less than 450 W while forming the plasma of all precursors within the processing region of the semiconductor processing chamber; and
depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber, wherein the silicon-containing material is amorphous, wherein the processing region is maintained free of helium delivery during the deposition method, and wherein the silicon-containing material is characterized by an as-deposited surface roughness of less than or about 1.00 nm.